ZXMN6A11GTC Diodes Zetex, ZXMN6A11GTC Datasheet
ZXMN6A11GTC
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ZXMN6A11GTC Summary of contents
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Product Summary V R (BR)DSS DS(on) 120mΩ 10V GS 60V 180mΩ 4.5V GS Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ...
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Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V = 10V GS Pulsed Drain Current V = 10V GS Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Thermal Characteristics ...
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Thermal Characteristics R 10 DS(on) Limited 100m 100ms 10ms T =25°C amb 25mm x 25mm 10m 1oz FR4 1 V Drain-Source Voltage (V) DS Safe Operating Area 60 T =25°C amb 25mm x 25mm 50 1oz FR4 ...
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Electrical Characteristics @T Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 6) Forward Transconductance (Notes 6 & 7) Diode Forward Voltage (Note 6) Reverse Recovery Time ...
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Typical Characteristics T = 25° 0.1 0.1 V Drain-Source Voltage (V) DS Output Characteristics 10V 150° 25°C 0 Gate-Source Voltage (V) GS Typical Transfer Characteristics 1 ...
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Typical Characteristics - continued 500 400 300 C ISS C 200 OSS 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuit Basic gate charge ...
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Package Outline Dimensions Millimeters DIM Min Max A - 1.80 A1 0.02 0.10 A2 1.55 1.65 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 Suggested Pad Layout ZXMN6A11G Document number: DS33556 Rev Inches DIM Min Max ...
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...