ZXMN6A11GTC Diodes Zetex, ZXMN6A11GTC Datasheet - Page 6

• Manufacturer Part Number: ZXMN6A11GTC
• Description: MOSFET N-CHAN 60V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A11GTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics - continued
Test Circuit
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
90%
10%
V
V
DS
GS
V
Capacitance v Drain-Source Voltage
G
500
400
300
200
100
0
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
DS
1
t
(on)
- Drain - Source Voltage (V)
t
r
C
ISS
Q
Q
G
GD
C
OSS
Charge
C
RSS
t
d(off)
10
t
(on)
t
V
f = 1MHz
r
GS
= 0V
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6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= 2.5A
1
12V
R
G
Diodes Incorporated
Q - Charge (nC)
A Product Line of
2
V
regulator
Current
GS
50k
I
G
V
3
GS
R
Same as
D.U.T
D
4
D.U.T
V
DS
V
= 30V
ZXMN6A11G
DS
5
I
V
D
© Diodes Incorporated
DS
October 2010
V
6
DD