ZXMN6A11GTC Diodes Zetex, ZXMN6A11GTC Datasheet - Page 5

• Manufacturer Part Number: ZXMN6A11GTC
• Description: MOSFET N-CHAN 60V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A11GTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
0.1
0.1
0.1
10
10
1
1
1
2
On-Resistance v Drain Current
T = 25°C
T = 25°C
0.1
T = 150°C
Typical Transfer Characteristics
V
3V
DS
V
V
DS
= 10V
GS
Output Characteristics
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
3
1
T = 25°C
3.5V
1
10V 5V
4V
4
10
10
4.5V
www.diodes.com
10V
5V
2.5V
3.5V
3V
V
4V
V
GS
GS
5
5 of 8
0.1
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
Source-Drain Diode Forward Voltage
10
1
1
-50
Normalised Curves v Temperature
T = 150°C
T = 150°C
0.4
0.1
V
V
Tj Junction Temperature (°C)
DS
SD
Output Characteristics
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
0.6
A Product Line of
1
V
I
D
50
GS
= 250uA
T = 25°C
0.8
V
I
D
= V
GS
= 2.5A
= 10V
DS
10V 5V
100
1.0
ZXMN6A11G
10
V
R
GS(th)
DS(on)
4V
3.5V
3V
V
2V
2.5V
GS
© Diodes Incorporated
1.2
150
October 2010