SI3812DV-T1-E3 Vishay, SI3812DV-T1-E3 Datasheet - Page 5
![MOSFET N-CH 20V 2A 6-TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3812DV-T1-E3
Manufacturer Part Number
SI3812DV-T1-E3
Description
MOSFET N-CH 20V 2A 6-TSOP
Manufacturer
Vishay
Datasheet
1.SI3812DV-T1-GE3.pdf
(7 pages)
Specifications of SI3812DV-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.4 A
Power Dissipation
0.83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
12V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3812DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3812DV-T1-E3
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
SI3812DV-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.0001
0.001
0.01
0.1
20
10
0.01
1
0.1
0
2
1
10
Reverse Current vs. Junction Temperature
-4
0.05
0.02
0.1
Duty Cycle = 0.5
0.2
25
Single Pulse
T
J
20 V
- Junction Temperature (°C)
50
75
10
10 V
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
100
This document is subject to change without notice.
150
120
90
60
30
0
0
125
4
150
Square Wave Pulse Duration (s)
10
-2
V
KA
- Reverse Voltage (V)
Capacitance
8
12
0.1
10
5
1
-1
0
16
0.2
T
J
20
V
= 150 °C
F
Forward Voltage Drop
- Forward Voltage Drop (V)
0.4
1
T
Vishay Siliconix
J
= 25 °C
www.vishay.com/doc?91000
0.6
Si3812DV
www.vishay.com
0.8
10
1.0
5