SI7135DP-T1-GE3 Vishay, SI7135DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7135DP-T1-GE3
• Description: MOSFET P-CH 30V 60A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7135DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 8650pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.6 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 6.2mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7135DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68807
S-81588-Rev. A, 07-Jul-08
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0
0.0
0
0
I
D
= 28 A
20
V
0.5
50
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
V
- Total Gate Charge (nC)
D
V
V
DS
GS
GS
- Drain Current (A)
Gate Charge
40
V
= 7.5 V
= 10 V
= 4.5 V
GS
100
1.0
= 10 thru 4 V
V
60
DS
= 22.5 V
V
V
GS
150
1.5
DS
= 3 V
80
= 15 V
New Product
100
200
2.0
12 000
8000
4000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0.0
0
I
D
On-Resistance vs. Junction Temperature
- 25
= 20 A
0.5
6
V
V
DS
DS
Transfer Characteristics
T
0
C
J
C
C
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
rss
- Junction Temperature (°C)
oss
1.0
iss
25
Capacitance
12
T
C
= 125 °C
1.5
50
V
Vishay Siliconix
GS
T
T
C
C
= 10 V
= - 55 °C
18
= 25 °C
75
Si7135DP
2.0
V
GS
www.vishay.com
100
= 4.5 V
24
2.5
125
150
3.0
30
3