SI7135DP-T1-GE3 Vishay, SI7135DP-T1-GE3 Datasheet - Page 6

MOSFET P-CH 30V 60A PPAK 8SOIC

SI7135DP-T1-GE3

Manufacturer Part Number
SI7135DP-T1-GE3
Description
MOSFET P-CH 30V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7135DP-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
8650pF @ 15V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0039 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
95 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31.6 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-60A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
6.2mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7135DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7135DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
SI7135DP-T1-GE3
Quantity:
70 000
Si7135DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68807.
1
10
10
-4
-4
Duty Cycle = 0.5
Duty Cycle = 0.5
0.1
0.2
0.05
0.02
0.2
0.1
Single Pulse
0.02
0.05
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
t
S-81588-Rev. A, 07-Jul-08
2
Document Number: 68807
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1000
1
0

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