SI7135DP-T1-GE3 Vishay, SI7135DP-T1-GE3 Datasheet - Page 5

MOSFET P-CH 30V 60A PPAK 8SOIC

SI7135DP-T1-GE3

Manufacturer Part Number
SI7135DP-T1-GE3
Description
MOSFET P-CH 30V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7135DP-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
8650pF @ 15V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0039 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
95 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31.6 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-60A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
6.2mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7135DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7135DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
SI7135DP-T1-GE3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68807
S-81588-Rev. A, 07-Jul-08
125
100
75
50
25
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
150
120
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
90
60
30
0
0
125
Package Limited
25
New Product
150
T
C
50
Current Derating*
- Case Temperature (°C)
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si7135DP
www.vishay.com
125
150
5

Related parts for SI7135DP-T1-GE3