IRF9520 Vishay, IRF9520 Datasheet

IRF9520

Manufacturer Part Number

IRF9520

Description

MOSFET P-CH 100V 6.8A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRF9520.pdf (6 pages)

2.IRF9520.pdf (9 pages)

Specifications of IRF9520

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

600 mOhm @ 4.1A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

6.8A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 10V

Input Capacitance (ciss) @ Vds

390pF @ 25V

Power - Max

60W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.6 Ohms

Drain-source Breakdown Voltage

- 100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

6.8 A

Power Dissipation

60 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF9520

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

(nC)

 - 6.8 A, dI/dt  110 A/μs, V

= - 25 V, starting T

()

TO-220AB

= 25 °C, L = 9.7 mH, R

= - 10 V

 V

, T

Single

P-Channel MOSFET

- 100

3.0

9.0

 175 °C.

This datasheet is subject to change without notice.

= 25 , I

= 25 °C, unless otherwise noted)

Power MOSFET

0.60

at - 10 V

6-32 or M3 screw

= - 6.8 A (see fig. 12).

for 10 s

= 25 °C

TO-220AB

IRF9520PbF

SiHF9520-E3

IRF9520

SiHF9520

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

SYMBOL

dV/dt

device

, T

stg

design,

IRF9520, SiHF9520

- 55 to + 175

LIMIT

- 100

± 20

- 6.8

- 4.8

- 6.8

- 5.5

300

0.40

- 27

300

6.0

1.1

low

www.vishay.com/doc?91000

Vishay Siliconix

on-resistance

www.vishay.com

lbf · in

UNIT

W/°C

N · m

RoHS*

COMPLIANT

V/ns

°C

Available

and

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