IRF9520 Vishay, IRF9520 Datasheet - Page 2

• Manufacturer Part Number: IRF9520
• Description: MOSFET P-CH 100V 6.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9520

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520

IRF9520, SiHF9520
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
V
R
V
R
t
t
R
R
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
GS
GS
= 25 °C, I
R
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
g
= - 10 V
= - 10 V
= 25 °C, I
= 18 , R
= - 80 V, V
V
V
V
V
V
DS
DD
f = 1.0 MHz, see fig. 5
DS
TYP.
DS
GS
0.50
TEST CONDITIONS
-
-
= - 50 V, I
= - 50 V, I
F
= V
= - 100 V, V
= 0 V, I
= - 6.8 A, dI/dt = 100 A/μs
V
V
V
GS
DS
S
GS
D
GS
I
= - 6.8 A, V
GS
D
= 7.1, see fig. 10
, I
= - 25 V,
= ± 20 V
= - 6.8 A, V
= 0 V,
D
D
= 0 V, T
see fig. 6 and 13
= - 250 μA
D
= - 250 μA
D
I
= - 4.1 A
= - 6.8 A,
D
GS
D
= - 4.1 A
= 0 V
= - 1 mA
J
GS
G
= 150 °C
G
DS
= 0 V
b
= - 80 V,
b
MAX.
D
S
b
S
b
D
2.5
b
62
-
b
MIN.
- 100
- 2.0
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91074
- 0.10
TYP.
0.33
390
170
9.6
4.5
7.5
45
29
21
25
98
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
- 6.8
- 6.3
0.60
0.66
- 27
200
3.0
9.0
S
18
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

V
V
S
A
V