... DS DS(on) 0.0069 0.0088 4 TO-263 Top View Ordering Information: SUM110P06-07L SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
... SUM110P06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 72439 S-80274-Rev. C, 11-Feb- 0.016 °C C 0.014 25 °C 0.012 0.010 125 °C 0.008 0.006 0.004 0.002 0.000 iss SUM110P06-07L Vishay Siliconix 200 160 120 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs ...
... SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 ( °C A 0.01 0.1 1 100 T = 150 °C ...
... Document Number: 72439 S-80274-Rev. C, 11-Feb-08 1000 100 10 1 0.1 0.1 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110P06-07L Vishay Siliconix Limited on °C C Single Pulse Drain-to-Source Voltage ( minimum V at which r is specified GS ...
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