SUM110P06-07L-E3 Vishay, SUM110P06-07L-E3 Datasheet - Page 4
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SUM110P06-07L-E3
Manufacturer Part Number
SUM110P06-07L-E3
Description
MOSFET P-CH 60V 110A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheet
1.SUM110P06-07L-E3.pdf
(6 pages)
Specifications of SUM110P06-07L-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
345nC @ 10V
Input Capacitance (ciss) @ Vds
11400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0069 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
8.8mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0069Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
110A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110P06-07L-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUM110P06-07L-E3
Manufacturer:
ST
Quantity:
30 000
Company:
Part Number:
SUM110P06-07L-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 821
Part Number:
SUM110P06-07L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUM110P06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
2.0
1.7
1.4
1.1
0.8
0.5
0.00001
0.1
10
1
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
I
D
AV
GS
0.0001
= 30 A
(A) at T
= 10 V
Avalanche Current vs. Time
0
T
J
A
- Junction Temperature (°C)
25
= 150 °C
0.001
50
t
in
(s)
I
AV
75
0.01
(A) at T
100
A
125
= 25 °C
0.1
150
175
1
100
10
75
72
69
66
63
60
1
- 50 - 25
0.0
Source-Drain Diode Forward Voltage
I
D
= 250 µA
Drain Source Breakdown vs.
0
T
0.3
V
J
T
SD
Junction Temperature
J
= 150 °C
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
25
50
0.6
S-80274-Rev. C, 11-Feb-08
Document Number: 72439
75
100
0.9
T
125
J
= 25 °C
150
175
1.2