SUM110P06-07L-E3 Vishay, SUM110P06-07L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110P06-07L-E3
• Description: MOSFET P-CH 60V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P06-07L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 8.8mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0069Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 110A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P06-07L-E3TR

SUM110P06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
2.0
1.7
1.4
1.1
0.8
0.5
0.00001
0.1
10
1
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
I
D
AV
GS
0.0001
= 30 A
(A) at T
= 10 V
Avalanche Current vs. Time
0
T
J
A
- Junction Temperature (°C)
25
= 150 °C
0.001
50
t
in
(s)
I
AV
75
0.01
(A) at T
100
A
125
= 25 °C
0.1
150
175
1
100
10
75
72
69
66
63
60
1
- 50 - 25
0.0
Source-Drain Diode Forward Voltage
I
D
= 250 µA
Drain Source Breakdown vs.
0
T
0.3
V
J
T
SD
Junction Temperature
J
= 150 °C
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
25
50
0.6
S-80274-Rev. C, 11-Feb-08
Document Number: 72439
75
100
0.9
T
125
J
= 25 °C
150
175
1.2