IRF9620 Vishay, IRF9620 Datasheet
IRF9620
Specifications of IRF9620
Available stocks
Related parts for IRF9620
IRF9620 Summary of contents
Page 1
... P-Channel MOSFET acceptance throughout the industry. TO-220 IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 = 25 °C, unless otherwise noted ° 100 ° °C C for screw ≤ 150 ° IRF9620, SiHF9620 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V - 200 DS V ± dV/dt - 5.0 ...
Page 2
... IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Transfer Characteristics Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SiHF9620 Vishay Siliconix Fig Typical Saturation Characteristics Fig Maximum Safe Operating Area www.vishay.com 3 ...
Page 4
... IRF9620, SiHF9620 Vishay Siliconix Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage Fig Breakdown Voltage vs. Temperature www.vishay.com 4 Fig Normalized On-Resistance vs. Temperature Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91082 S-81272-Rev. A, 16-Jun-08 ...
Page 5
... Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Fig Power vs. Temperature Derating Curve Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SiHF9620 Vishay Siliconix Vary t to obtain p required I L D.U. 0 Fig Clamped Inductive Test Circuit Fig Clamped Inductive Waveforms D.U.T. ...
Page 6
... IRF9620, SiHF9620 Vishay Siliconix Charge Fig. 18a - Basic Gate Charge Waveform Reverse recovery current Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
Page 7
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...