IRF9620 Vishay, IRF9620 Datasheet - Page 5

• Manufacturer Part Number: IRF9620
• Description: MOSFET P-CH 200V 3.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9620

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9620

Document Number: 91082
S-81272-Rev. A, 16-Jun-08
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 14 - Power vs. Temperature Derating Curve
V
GS
= - 10 V
Fig. 15 - Clamped Inductive Test Circuit
Fig. 16 - Clamped Inductive Waveforms
Vary t
required I
10 %
90 %
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
V
V
GS
t
DS
p
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
p
G
to obtain
- 10 V
V
L
GS
t
d(on)
I
L
V
D.U.T.
DS
IRF9620, SiHF9620
I
t
t
L
V
r
p
DD
= 0.5 V
D.U.T.
E
C
R
DS
Vishay Siliconix
D
t
d(off)
V
DS
E
V
t
f
C
DS
+
-
= 0.75 V
www.vishay.com
V
DD
0.05 Ω
E
C
V
V
DD
L
DD
DS
-
+
5