IRF9620 Vishay, IRF9620 Datasheet - Page 3

• Manufacturer Part Number: IRF9620
• Description: MOSFET P-CH 200V 3.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9620

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9620

IRF9620, SiHF9620
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91082
www.vishay.com
S-81272-Rev. A, 16-Jun-08
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