SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet - Page 3
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SUM65N20-30-E3
Manufacturer Part Number
SUM65N20-30-E3
Description
MOSFET N-CH 200V 65A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SUM65N20-30-E3.pdf
(6 pages)
Specifications of SUM65N20-30-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
65A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM65N20-30-E3
SUM65N20-30-E3TR
SUM65N20-30-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY
Quantity:
742
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
7000
6000
5000
4000
3000
2000
1000
140
120
100
180
150
120
80
60
40
20
90
60
30
0
0
0
0
0
0
V
GS
= 10 thru 7 V
25
20
C
2
V
V
rss
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
50
40
I
D
Capacitance
- Drain Current (A)
4
C
75
60
C
oss
iss
6
100
80
T
C
8
= - 55 °C
125
100
125 °C
25 °C
6 V
5 V
4 V
150
120
10
0.060
0.045
0.030
0.015
0.000
140
120
100
20
16
12
80
60
40
20
8
4
0
0
0
0
0
V
I
D
DS
= 65 A
1
On-Resistance vs. Drain Current
25
20
= 100 V
V
Transfer Characteristics
GS
Q
V
2
g
GS
- Gate-to-Source Voltage (V)
50
- Total Gate Charge (nC)
40
I
D
= 10 V
Gate Charge
- Drain Current (A)
25 °C
T
3
SUM65N20-30
C
75
= 125 °C
60
Vishay Siliconix
4
100
80
www.vishay.com
5
100
125
- 55 °C
6
120
150
7
3