SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet - Page 4
![MOSFET N-CH 200V 65A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
SUM65N20-30-E3
Manufacturer Part Number
SUM65N20-30-E3
Description
MOSFET N-CH 200V 65A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SUM65N20-30-E3.pdf
(6 pages)
Specifications of SUM65N20-30-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
65A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM65N20-30-E3
SUM65N20-30-E3TR
SUM65N20-30-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY
Quantity:
742
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUM65N20-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00001
0.1
10
1
- 50 - 25
I
On-Resistance vs. Junction Temperature
AV
V
I
D
GS
(A) at T
= 30 A
0.0001
= 10 V
Avalanche Current vs. Time
0
T
A
J
= 150 °C
- Junction Temperature (°C)
25
I
AV
0.001
(A) at T
50
t
in
(s)
A
75
= 25 °C
0.01
100
125
0.1
150
175
1
100
240
230
220
210
200
190
180
10
1
0
- 50 - 25
I
Source-Drain Diode Forward Voltage
D
= 1.0 mA
V
0
0.3
T
vs. Junction Temperature
Drain Source Breakdown
SD
T
J
J
= 150 °C
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
25
50
0.6
S-80272-Rev. D, 11-Feb-08
Document Number: 71702
75
100
T
J
= 25 °C
0.9
125
150
175
1.2