SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM65N20-30-E3
• Description: MOSFET N-CH 200V 65A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM65N20-30-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM65N20-30-E3; SUM65N20-30-E3TR

SUM65N20-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00001
0.1
10
1
- 50 - 25
I
On-Resistance vs. Junction Temperature
AV
V
I
D
GS
(A) at T
= 30 A
0.0001
= 10 V
Avalanche Current vs. Time
0
T
A
J
= 150 °C
- Junction Temperature (°C)
25
I
AV
0.001
(A) at T
50
t
in
(s)
A
75
= 25 °C
0.01
100
125
0.1
150
175
1
100
240
230
220
210
200
190
180
10
1
0
- 50 - 25
I
Source-Drain Diode Forward Voltage
D
= 1.0 mA
V
0
0.3
T
vs. Junction Temperature
Drain Source Breakdown
SD
T
J
J
= 150 °C
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
25
50
0.6
S-80272-Rev. D, 11-Feb-08
Document Number: 71702
75
100
T
J
= 25 °C
0.9
125
150
175
1.2