IRFP17N50L Vishay, IRFP17N50L Datasheet - Page 3

• Manufacturer Part Number: IRFP17N50L
• Description: MOSFET N-CH 500V 16A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFP17N50L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
100
100
0.1
0.1
Fig. 1 - Typical Output Characteristics
10
Fig. 2 - Typical Output Characteristics
10
1
1
0.1
0.1
TOP
BOTTOM 5.0V
TOP
BOTTOM 5.0V
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
VGS
VGS
12V
10V
8.0V
7.0V
6.0V
5.5V
12V
10V
8.0V
7.0V
6.0V
5.5V
15V
15V
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
10
10
5.0V
This datasheet is subject to change without notice.
5.0V
100
100
IRFP17N50L, SiHFP17N50L
Fig. 4 - Normalized On-Resistance vs. Temperature
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
4.0
Fig. 3 - Typical Transfer Characteristics
I =
D
16A
5.0
V
T , Junction Temperature ( C)
GS
J
T = 150 C
J
, Gate-to-Source Voltage (V)
0
6.0
20 40 60 80 100 120 140 160
°
T = 25 C
7.0
J
www.vishay.com/doc?91000
Vishay Siliconix
V
20µs PULSE WIDTH
°
DS
8.0
= 50V
V
GS
°
www.vishay.com
9.0
=
10V
10.0
3