IRFP17N50L Vishay, IRFP17N50L Datasheet - Page 5

• Manufacturer Part Number: IRFP17N50L
• Description: MOSFET N-CH 500V 16A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFP17N50L

Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
16
12
8
4
0
25
0.001
0.01
0.1
0.00001
1
D = 0.50
50
T , Case Temperature ( C)
0.20
0.10
0.05
0.02
0.01
C
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
This datasheet is subject to change without notice.
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
IRFP17N50L, SiHFP17N50L
1. Duty factor D =t / t
2. Peak T = P
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Notes:
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
J
V
GS
t
d(on)
DM
V
x Z
DS
1
0.1
t
r
thJC
P
2
DM
+ T
C
t
D.U.T.
1
www.vishay.com/doc?91000
t
R
2
Vishay Siliconix
D
t
d(off)
t
1
f
+
-
www.vishay.com
V
DD
5