IRFP17N50L Vishay, IRFP17N50L Datasheet - Page 6

• Manufacturer Part Number: IRFP17N50L
• Description: MOSFET N-CH 500V 16A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFP17N50L

IRFP17N50L, SiHFP17N50L
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 14a - Unclamped Inductive Test Circuit
1000
10 V
Fig. 15a - Basic Gate Charge Waveform
100
0.1
V
10
Fig. 12 - Maximum Safe Operating Area
1
G
10
R G
T
T
Single Pulse
20 V
C
J
V DS
Q
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
GS
V
t p
DS
°
°
I AS
, Drain-to-Source Voltage (V)
D.U.T
Charge
0.01 Ω
100
L
Q
Q
GD
G
BY R
DS(on)
10us
100us
1ms
10ms
15 V
1000
Driver
This datasheet is subject to change without notice.
+
- V DD
A
10000
Fig. 13 - Maximum Avalanche Energy vs. Drain Current
Fig. 14b - Unclamped Inductive Waveforms
800
640
480
320
160
I
AS
12 V
0
Fig. 15b - Gate Charge Test Circuit
25
V
GS
Same type as D.U.T.
Starting T , Junction Temperature ( C)
Current regulator
0.2 µF
50
Current sampling resistors
3 mA
50 kΩ
J
0.3 µF
75
t
p
I
G
S11-0446-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
100
Document Number: 91205
D.U.T.
TOP
BOTTOM
V
I
D
DS
125
+
-
V
I D
10A
16A
DS
°
7A
150