IRFPS43N50K Vishay, IRFPS43N50K Datasheet - Page 2

• Manufacturer Part Number: IRFPS43N50K
• Description: MOSFET N-CH 500V 47A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS43N50K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 8310pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 47 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.09Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS43N50K

IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  400 μs; duty cycle  2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Recovery Current
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
C
R
V
oss
t
t
C
C
I
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
RRM
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
thCS
DS
oss
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
J
GS
GS
V
GS
= 25 °C, I
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
Reference to 25 °C, I
= 10 V
= 10 V
J
= 0 V
= 400 V, V
= 25 °C, I
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
V
TEST CONDITIONS
0.24
DS
DS
GS
oss
DS
-
-
= 500 V, V
F
= V
= 0 V, I
V
while V
= 50 V, I
V
= 47 A, dI/dt = 100 A/μs
V
GS
DS
V
V
S
GS
GS
R
GS
I
V
DS
DS
D
G
= 47 A, V
= ± 30 V
DD
V
= 25 V,
, I
= 0 V,
= 47 A, V
see fig. 6 and 13
= 0 V, T
= 400 V, f = 1.0 MHz
DS
= 1.0 , see fig. 10
= 1.0 V, f = 1.0 MHz
D
D
DS
= 250 V, I
= 250 μA
D
= 250 μA
= 0 V to 400 V
GS
I
D
is rising from 0 % to 80 % V
= 28 A
= 28 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
= 0 V
D
= 400 V,
b
= 47 A,
b
MAX.
b
0.23
D
S
c
40
-
b
b
MIN.
500
3.0
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0112-Rev. C, 31-Jan-11
DS
Document Number: 91262
10170
0.078
TYP.
8310
0.60
.
960
120
240
440
140
620
25
55
74
14
38
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.090
250
350
180
190
940
5.0
1.5
S
50
85
47
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
ns
ns

S
A
A
V
V
V