IRFPS43N50K Vishay, IRFPS43N50K Datasheet - Page 4

• Manufacturer Part Number: IRFPS43N50K
• Description: MOSFET N-CH 500V 47A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS43N50K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 8310pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 47 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.09Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS43N50K

IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
www.vishay.com
4
1000000
100000
10000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
20
15
10
5
0
1
0
I =
D
48A
50
V DS , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
100
10
= C gd
150
f = 1 MHZ
Coss
200
Ciss
Crss
V
V
V
DS
DS
DS
100
= 400V
= 250V
= 100V
250
300
1000
350
1000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
1000
10
100
0.1
1
10
10
1
0.2
T
T
Single Pulse
C
J
T = 150 C
Fig. 8 - Maximum Safe Operating Area
= 25 C °
= 150 C
J
OPERATION IN THIS AREA LIMITED
V
V
DS
SD
°
°
, Drain-to-Source Voltage (V)
0.7
,Source-to-Drain Voltage (V)
T = 25 C
J
BY R
100
1.2
°
DS(on)
S11-0112-Rev. C, 31-Jan-11
Document Number: 91262
1.7
V
GS
10us
100us
1ms
10ms
= 0 V
1000
2.2