IRFPS43N50K Vishay, IRFPS43N50K Datasheet - Page 6

• Manufacturer Part Number: IRFPS43N50K
• Description: MOSFET N-CH 500V 47A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS43N50K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 8310pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 47 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.09Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS43N50K

IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
www.vishay.com
6
Fig. 12a - Unclamped Inductive Test Circuit
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
R
20 V
G
V
Q
DS
GS
t
p
I
Charge
AS
D.U.T
Q
Q
GD
0.01 Ω
G
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
2000
1500
1000
15 V
500
0
25
Driver
Starting T , Junction Temperature ( C)
+
- V
A
DD
50
J
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
I
AS
125
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
°
I D
22A
30A
47A
0.2 µF
150
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0112-Rev. C, 31-Jan-11
Document Number: 91262
D.U.T.
V
I
D
DS
+
-
V
DS