RW1A020ZPT2R Rohm Semiconductor, RW1A020ZPT2R Datasheet
RW1A020ZPT2R
Specifications of RW1A020ZPT2R
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RW1A020ZPT2R Summary of contents
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Drive Pch MOSFET RW1A020ZP Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Applications Switching Packaging specifications Package Taping Type Code T2R 8000 Basic ordering unit (pieces) RW1A020ZP Absolute maximum ratings ...
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RW1A020ZP Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS −12 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) ∗ Static drain-source on-state R DS (on) resistance ...
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RW1A020ZP Electrical characteristics curves ｗ 4 Ta=25°C -10V Pulsed 3.5 -4.5V 3 -2.5V 2.5 -1.8V 2 1.5 -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical Output ...
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RW1A020ZP 10 V =0V GS Pulsed 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25° - ...
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