RP1E050RPTR Rohm Semiconductor, RP1E050RPTR Datasheet - Page 4

• Manufacturer Part Number: RP1E050RPTR
• Description: MOSFET P-CH 30V 5A MPT6
• Manufacturer: Rohm Semiconductor

Specifications of RP1E050RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 9.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: MPT6
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 58 mOhms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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RP1E050RP
10000
1000
0.01
200
150
100
100
0.1
50
10
10
0
1
0.001
0.01
0
Ta=25°C
f=1MHz
V
Fig.10 Static Drain-Source On-State
I
GS
D
= -2.5A
DRAIN-SOURCE VOLTAGE : -V
=0V
GATE-SOURCE VOLTAGE : -V
Crss
Fig.13 Typical Capacitance
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Resistance vs. Gate Source Voltage
0.1
0.01
5
I
vs. Drain-Source Voltage
D
= -5.0A
1
Coss
0.1
10
PULSE WIDTH : Pw(s)
Ciss
10
Ta=25°C
Pulsed
GS
DS
[V]
[V]
100
1
15
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
1000
1000
10
0.01
100
100
0.1
10
10
1
1
0.01
0.1
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
Operation in this area is limited by R
(V
Fig.14 Maximum Safe Operating Area
GS
DRAIN-SOURCE VOLTAGE : -V
=-10V)
t
100
t
d
d
(on)
(off)
Fig.11 Switching Characteristics
DRAIN-CURRENT : -I
0.1
1
4/5
1000
t
f
10
t
1
r
Ta=25°C
V
V
R
Pulsed
DD
GS
G
DC operation
=10Ω
D
= -15V
= -10V
DS(on)
[A]
P
P
P
W
W
W
=100us
=1ms
= 10ms
DS
100
10
[V]
10
8
6
4
2
0
0
Fig.12 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
5
10
2010.07 - Rev.B
15
Ta=25°C
V
I
R
Pulsed
D
DD
= -5.0A
G
=10Ω
= -15V
Data Sheet
20