RSS040P03FU6TB Rohm Semiconductor, RSS040P03FU6TB Datasheet
RSS040P03FU6TB
Specifications of RSS040P03FU6TB
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RSS040P03FU6TB Summary of contents
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Transistors Switching (−30V, −4.0A) RSS040P03 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching converter. Structure Silicon P-channel MOS FET Packaging specifications Package Taping Type Code Basic ...
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Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
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Transistors Electrical characteristic curves 10 = −10V V DS Pulsed Ta=125°C 1 Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GATE-SOURCE VOLTAGE : −V (V) GS Fig.1 Typical Transfer Characteristics 1000 = ...
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Transistors Measurement circuits D.U. Fig.10 Switching Time Test Circuit (Const.) D.U. Fig.12 Gate Charge Test Circuit ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...