RRH075P03TB1 Rohm Semiconductor, RRH075P03TB1 Datasheet
RRH075P03TB1
Specifications of RRH075P03TB1
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RRH075P03TB1 Summary of contents
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Drive Pch MOSFET RRH075P03 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Package Taping Type Code TB 2500 Basic ordering unit (pieces) RRH075P03 Absolute ...
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RRH075P03 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward ...
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RRH075P03 Electrical characteristics curves 10 Ta=25 ℃ Pulsed 10V ...
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RRH075P03 100 T =25℃ a Pulsed I =-7. =-4. GATE-SOURCE VOLTAGE : -V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ciss 1000 Crss 100 Coss Ta=25℃ f=1MHz ...
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RRH075P03 Measurement circuit D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge Measurement ...
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No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...