BUK9620-55A,118 NXP Semiconductors, BUK9620-55A,118 Datasheet - Page 10

• Manufacturer Part Number: BUK9620-55A,118
• Description: MOSFET N-CH 55V 54A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9620-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 118W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 54 A
• Power Dissipation: 118000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056265118; BUK9620-55A /T3; BUK9620-55A /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK9620-55A
Product data sheet
Document ID
BUK9620-55A v.2
Modifications:
BUK9520_9620_55A-01
(9397 750 07794)
Revision history
Release date
20100604
20010129
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9620-55A separated from data sheet BUK9520_9620_55A-01.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product Specification
Product data sheet
Rev. 02 — 4 June 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9620-55A
-
Supersedes
BUK9520_9620_55A-01
© NXP B.V. 2010. All rights reserved.
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