BUK9620-55A,118 NXP Semiconductors, BUK9620-55A,118 Datasheet - Page 8

MOSFET N-CH 55V 54A D2PAK

BUK9620-55A,118

Manufacturer Part Number
BUK9620-55A,118
Description
MOSFET N-CH 55V 54A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9620-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
118W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
54 A
Power Dissipation
118000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056265118
BUK9620-55A /T3
BUK9620-55A /T3
NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
120
100
80
60
40
20
0
120
0.0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 4 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
C (pF)
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−2
C
C
C
SD
iss
oss
rss
(V)
03nc86
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9620-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nc93
(V)
10
2
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