ATP301-TL-H SANYO, ATP301-TL-H Datasheet - Page 4
![MOSFET P-CH 100V 28A ATPAK](/photos/5/52/55290/atp108-tl-h_sml.jpg)
ATP301-TL-H
Manufacturer Part Number
ATP301-TL-H
Description
MOSFET P-CH 100V 28A ATPAK
Manufacturer
SANYO
Datasheet
1.ATP301-TL-H.pdf
(4 pages)
Specifications of ATP301-TL-H
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28A
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 20V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
ATPAK (2 leads+tab)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
57mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Transistor Case Style
ATPAK
No. Of Pins
3
Current Id
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1086-2
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
80
70
60
50
40
30
20
10
0
0
0
0
Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of April, 2009. Specifi cations and information herein are subject
to change without notice.
V DS = --60V
I D = --28A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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mentioned above.
10
20
20
40
Total Gate Charge, Qg -- nC
Case Temperature, Tc -- °C
of highly charged objects.
30
60
V GS -- Qg
P D -- Tc
40
80
100
50
120
60
140
70
IT14600
IT14602
160
80
ATP301
--0.01
--100
--1.0
--0.1
--10
120
100
80
60
40
20
--0.1
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
Tc=25°C
Single pulse
I DP = --112A
I D = --28A
2
25
3
Operation in
this area is
limited by R DS (on).
Drain-to-Source Voltage, V DS -- V
5 7
Ambient Temperature, Ta -- °C
50
--1.0
E AS -- Ta
2
75
A S O
3
5 7
100
--10
PW≤10μs
2
125
3
PS
5 7 --100
No. A1457-4/4
150
IT14601
IT14603
175
2