PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet - Page 3
![MOSFET N-CH 150V 50A SOT404](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
PSMN035-150B,118
Manufacturer Part Number
PSMN035-150B,118
Description
MOSFET N-CH 150V 50A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN035-150B118.pdf
(12 pages)
Specifications of PSMN035-150B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
79nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055717118::PSMN035-150B /T3::PSMN035-150B /T3
NXP Semiconductors
PSMN035-150B_4
Product data sheet
Fig 1.
Fig 3.
P
(%)
(%)
I
der
der
120
120
80
40
80
40
0
0
function of mounting base temperature
function of mounting base temperature
Normalized continuous drain current as a
Normalized total power dissipation as a
0
0
50
50
100
100
150
150
T
T
mb
mb
03aa24
03aa16
(°C)
(°C)
Rev. 04 — 17 November 2009
200
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
Fig 4.
(A)
I
(A)
I
AS
D
10
10
10
10
10
1
1
3
2
2
10
currents as a function of drain-source volt
as a function of pulse duration
Safe operating area; continuous and peak drain
Non-repetitive avalanche ruggedness current
1
−3
P
R
DSon
T
j
t
p
prior to avalanche = 150 °C
= V
T
10
DS
−2
d =
/ I
10
D
T
t
t
p
PSMN035-150B
10
D.C.
−1
10
2
25 °C
100 ms
V
1
t
© NXP B.V. 2009. All rights reserved.
100 μs
10 ms
p
1 ms
DS
= 10 μs
003aaa016
003aaa017
t
p
(V)
(ms)
10
10
3
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