STD2HNK60Z STMicroelectronics, STD2HNK60Z Datasheet - Page 7
![MOSFET N-CH 600V 2A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD2HNK60Z
Manufacturer Part Number
STD2HNK60Z
Description
MOSFET N-CH 600V 2A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STD2HNK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6192-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2HNK60Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD2HNK60Z-1
Manufacturer:
STMicroelectronics
Quantity:
485
Part Number:
STD2HNK60Z-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD2HNK60ZT4
Manufacturer:
ST
Quantity:
20 000
STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
Figure 7.
Figure 9.
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
Output characterisics
Normalized B
VDSS
vs temperature
Figure 8.
Figure 10. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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