IRF7321D2TRPBF International Rectifier, IRF7321D2TRPBF Datasheet

IRF7321D2TRPBF

Manufacturer Part Number

IRF7321D2TRPBF

Description

MOSFET P-CH 30V 4.7A 8-SOIC

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7321D2TRPBF.pdf (8 pages)

Specifications of IRF7321D2TRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

62 mOhm @ 4.9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.7A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

34nC @ 10V

Input Capacitance (ciss) @ Vds

710pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

98 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 4.9 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Gate Charge Qg

23 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7321D2PBFTR

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Description

The FETKY

Schottky diodes offer the designer an innovative board

space saving solution for switching regulator

power management applications.

HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combinining this technology with International

Rectifier's low forward drop Schottky rectifiers results in

an extremely efficient device suitable for use in a wide

variety of portable electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The

SO-8 package is designed for vapor phase, infrared or

wave soldering techniques.

Absolute Maximum Ratings ( T

Thermal Resistance Ratings

Notes:

‚

„

dv/dt

θJA

Pulse width ≤ 300µs – duty cycle ≤ 2%

Low V

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

Surface mounted on FR-4 board, t ≤ 10sec.

Co-packaged HEXFET® Power

MOSFET and Schottky Diode

Ideal For Buck Regulator Applications

P-Channel HEXFET®

Generation 5 Technology

SO-8 Footprint

Lead-Free

@ T

STG

≤ -2.9A, di/dt ≤ -77A/µs, V

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

family of Co-packaged HEXFETs and

Parameter

Continuous Drain Current, V

Pulsed Drain Current À

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt Á

Junction and Storage Temperature Range

Parameter

Junction-to-Ambient

≤ V

(BR)DSS

Generation 5

, T

= 25°C Unless Otherwise Noted)

≤ 150°C

and

@ -10V

FETKY MOSFET & Schottky Diode

Top View

IRF7321D2PbF

-55 to +150

Maximum

SO-8

± 20

-4.7

-3.8

-5.0

Maximum

-38

2.0

1.3

62.5

Schottky Vf = 0.52V

DS(on)

DSS

www.irf.com

= 0.062Ω

PD - 95297

= -30V

Units

mW/°C

°C/W

Units

V/ns

°C

Related parts for IRF7321D2TRPBF

IRF7321D2TRPBF Summary of contents

Page 1

Co-packaged HEXFET® Power l MOSFET and Schottky Diode Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low V Schottky Rectifier l F Generation 5 Technology l SO-8 Footprint l Lead-Free l Description TM The FETKY family of Co-packaged HEXFETs ...

Page 2

... Vfm Max. Forward voltage drop Irm Max. Reverse Leakage current Ct Max. Junction Capacitance dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -30 ––– ––– ...

Page 3

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = ...

Page 4

Power Mosfet Characteristics 1400 GS 1200 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150° ...

Page 5

SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.6 0.5 0.4 0 -4.5V GS 0.2 0.1 0 www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse ...

Page 6

Schottky Diode Characteristics 100 150° 125° 25°C 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - V Fig Typical Forward Voltage Drop Characteristics 6 1 ...

Page 7

SO-8 (Fetky) Package Outline 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ...

Page 8

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) This product has been designed and qualified for the Consumer market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 TERMINAL NUMBER 1 8.1 ...

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