IRLR9343TRPBF International Rectifier, IRLR9343TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLR9343TRPBF
• Description: MOSFET P-CH 55V 20A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR9343TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

∆ΒV
∆V
Electrical Characteristics @ T
BV
R
V
I
I
g
Q
Q
Q
Q
t
t
t
t
C
C
C
C
L
L
Avalanche Characteristics
E
I
E
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
fs
D
S
GS(th)
AS
AR
SD
DS(on)
g
gs
gd
godr
iss
oss
rss
oss
rr
@ T
2
GS(th)
DSS
DSS
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
Ãi
J
= 25°C (unless otherwise specified)
i
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
5.3
-3.7
–––
150
–––
–––
–––
–––
–––
–––
660
160
280
–––
–––
–––
120
-52
7.1
8.5
9.5
9.5
4.5
7.5
93
31
15
24
21
72
57
-100
Typ.
See Fig. 14, 15, 17a, 17b
–––
–––
105
170
–––
–––
-2.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.2
180
-25
-20
-60
47
86
mV/°C
mV/°C
mΩ
nH
nC
µA
nA
pF
ns
ns
V
S
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 19
V
I
R
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
G
= -14A
= -14A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -55V, V
= -55V, V
= -20V
= 20V
= -25V, I
= -44V
= -10V
= -28V, V
= 0V
= -50V
= 0V, V
GS
Max.
120
, I
D
Conditions
D
Conditions
S
F
DS
= -250µA
D
D
= -14A
= -250µA
= -14A, V
D
GS
GS
GS
= -3.4A
= -14A
= 0V to -44V
= -2.7A
e
= 0V
= 0V, T
= -10V
See Fig.5
D
www.irf.com
= -1mA
e
GS
e
Ãe
J
G
= 125°C
f
= 0V
Units
mJ
mJ
A
e
D
S