IRLR9343TRPBF International Rectifier, IRLR9343TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLR9343TRPBF
• Description: MOSFET P-CH 55V 20A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR9343TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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6
Fig 19a. Gate Charge Test Circuit
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‚
+
-
I
AS
R
-20V
G
D.U.T
V DS
GS
1K
t p
ƒ
Fig 16.
I AS
D.U.T
+
-
•
•
•
•
t p
0.01 Ω
L
SD
DUT
•
•
•
DRIVER
L
V
(BR)DSS
-
„
G
HEXFET
15V
+
V DD
VCC
A
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
V
10%
90%
V
Waveform
GS
DS
Waveform
Fig 19b Gate Charge Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
for P-Channel
Period
Body Diode Forward
t
d(on)
Diode Recovery
Current
≤ 0.1 %
≤ 1
Qgd
dv/dt
Forward Drop
t
r
di/dt
D =
Qgodr
Period
P.W.
t
d(off)
V
V
I
SD
GS
DD
+
-
Vgs
=10V
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t
f
Id