IRLR9343TRPBF International Rectifier, IRLR9343TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLR9343TRPBF
• Description: MOSFET P-CH 55V 20A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR9343TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
4
100.0
20
16
12
10.0
8
4
0
1.0
0.1
25
0.2
0.001
0.01
0.1
10
1
0.4
1E-006
50
T J = 175°C
-V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
0.6
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
0.8
0.20
0.10
0.05
0.02
0.01
T J = 25°C
1.0
100
SINGLE PULSE
( THERMAL RESPONSE )
1.2
1E-005
125
1.4
V GS = 0V
1.6
150
1.8
t 1 , Rectangular Pulse Duration (sec)
175
2.0
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= i/Ri
0.001
R
1
R
Fig 10. Threshold Voltage vs. Temperature
1
2.5
2.0
1.5
1.0
1000
100
τ
10
2
1
τ
-75 -50 -25
R
2
2
Fig 8. Maximum Safe Operating Area
R
1
2
Tc = 25°C
Tj = 175°C
Single Pulse
τ
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
-V DS , Drain-toSource Voltage (V)
Ri (°C/W)
T J , Temperature ( °C )
0.01
1.162
0.7370
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
25
50
τi (sec)
0.000512
0.002157
75
10msec
1msec
I D = -250µA
100µsec
100
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100 125 150 175
0.1
1000