STD60NF3LLT4 STMicroelectronics, STD60NF3LLT4 Datasheet

MOSFET N-CH 30V 60A DPAK

STD60NF3LLT4

Manufacturer Part Number
STD60NF3LLT4
Description
MOSFET N-CH 30V 60A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD60NF3LLT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 4.5V
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
60 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2476-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD60NF3LLT4
Manufacturer:
ST
0
Part Number:
STD60NF3LLT4
Manufacturer:
ST
Quantity:
20 000
Order codes
General features
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size™” strip-based process. The
resulting transistor shows the best trade-off
between on-resistance ang gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
July 2006
STD60NF3LL
Optimal R
Conduction losses reduced
Switching losses reduced
Switching application
Type
STD60NF3LLT4
Part number
DS(ON)
V
x Q
60V
DSS
g
trade-off @ 4.5V
<0.0095Ω
R
DS(on)
D60NF3LL
Marking
N-channel 30V - 0.0075Ω - 60A - DPAK
60A
I
D
Rev 2
Internal schematic diagram
STripFET™ II Power MOSFET
Package
DPAK
DPAK
STD60NF3LL
1
3
Tape & reel
Packaging
www.st.com
1/13
13

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STD60NF3LLT4 Summary of contents

Page 1

... This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Applications ■ Switching application Order codes Part number STD60NF3LLT4 July 2006 N-channel 30V - 0.0075Ω - 60A - DPAK STripFET™ II Power MOSFET R I DS(on) D <0.0095Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD60NF3LL 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD60NF3LL Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD60NF3LL ...

Page 7

STD60NF3LL Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/13 ...

Page 8

Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/13 Figure 13. Gate charge test circuit Figure 15. ...

Page 9

STD60NF3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 10

Package mechanical data DIM (L1 10/13 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

Page 11

STD60NF3LL 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 R ...

Page 12

Revision history 6 Revision history Table 6. Revision history Date 09-Sep-2004 19-Jul-2006 12/13 Revision 4 Preliminary version 5 New template, no content change STD60NF3LL Changes ...

Page 13

... STD60NF3LL Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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