STD4NK60ZT4 STMicroelectronics, STD4NK60ZT4 Datasheet - Page 6
![MOSFET N-CH 600V 4A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD4NK60ZT4
Manufacturer Part Number
STD4NK60ZT4
Description
MOSFET N-CH 600V 4A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STD4NK60ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5889-2
Q2161615
STD4NK60ZT4
Q2161615
STD4NK60ZT4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD4NK60ZT4
Manufacturer:
TI
Quantity:
15 600
Part Number:
STD4NK60ZT4
Manufacturer:
ST
Quantity:
20 000
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/16