IRF7241PBF International Rectifier, IRF7241PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF7241PBF
Manufacturer Part Number
IRF7241PBF
Description
MOSFET P-CH 40V 6.2A 8-SOIC
Manufacturer
International Rectifier
Specifications of IRF7241PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
41 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3220pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
70 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 6.2 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
100 ns
Gate Charge Qg
53 nC
Minimum Operating Temperature
- 55 C
Rise Time
280 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Description
Thermal Resistance
New trench HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
www.irf.com
Symbol
R
R
V
I
I
I
P
P
V
T
D
D
DM
Available in Tape & Reel
J,
Trench Technology
Ultra Low On-Resistance
Lead-Free
DS
D
D
GS
θJL
θJA
P-Channel MOSFET
@ T
@ T
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
device
Junction-to-Drain Lead
Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
design that HEXFET power
®
Power MOSFETs
Parameter
Parameter
GS
GS
@ -10V
@ -10V
from
G
S
S
S
V
-40V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
HEXFET
8
6
5
7
DS(on)
IRF7241PbF
-55 to + 150
70@V
41@V
Max.
-6.2
-4.9
± 20
D
D
D
D
-40
-25
2.5
1.6
A
20
GS
GS
max (mW)
®
= -4.5V
= -10V
Power MOSFET
Max.
20
50
SO-8
-6.2A
-5.0A
mW/°C
Units
Units
I
°C/W
D
°C
V
A
V
1
10/6/04
Related parts for IRF7241PBF
IRF7241PBF Summary of contents
... STG Thermal Resistance Symbol Parameter R Junction-to-Drain Lead θJL R Junction-to-Ambient θJA www.irf.com V DSS -40V 1 S from Top View @ -10V GS @ -10V GS Typ. IRF7241PbF ® HEXFET Power MOSFET R max (mW) I DS(on) D 41@V = -10V -6.2A GS 70@V = -4.5V -5. SO-8 Max. Units -40 V -6.2 -4 ...
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
VGS TOP -15V -10V -4.5V -3.7V -3.5V 100 -3.3V -3.0V BOTTOM -2. 0.1 -2.70V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...
0V MHZ C iss = rss = C gd 4000 C oss = Ciss 3000 2000 1000 Coss Crss ...
T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
-6.2A 0.04 0. GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...
Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 100 -250µ 100 125 150 0.001 ...
SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ...
SO-8 Tape and Reel Dimensions are shown in milimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION ...
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