IRF7241PBF International Rectifier, IRF7241PBF Datasheet - Page 7

• Manufacturer Part Number: IRF7241PBF
• Description: MOSFET P-CH 40V 6.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7241PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3220pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.2 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 100 ns
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 280 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.0
2.5
2.0
1.5
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
50
I D = -250µA
75
100
125
150
100
80
60
40
20
0
0.001
Fig 16. Typical Power Vs. Time
0.010
0.100
Time (sec)
1.000
10.000
100.000
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