IRFR3711PBF International Rectifier, IRFR3711PBF Datasheet - Page 2

• Manufacturer Part Number: IRFR3711PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3711PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2980pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

∆V
Static @ T
V
R
V
I
I
Dynamic @ T
g
Q
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
rr
fs
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
2
g
gs
gd
oss
rr
rr
(BR)DSS
Symbol
Symbol
Symbol
Symbol
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ù
Parameter
Parameter
Parameter
Ù
Min
Min
Min
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.3
20
53
0.022
2980
1770
Typ
Typ
Typ
0.88
0.82
–––
–––
–––
–––
–––
–––
–––
–––
220
280
–––
–––
–––
5.2
6.7
7.3
8.9
29
33
12
17
12
50
61
48
65
110
Max Units
Max Units
Max Units
-200
Typ
–––
–––
140
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
440
–––
6.5
8.5
3.0
2.5
1.3
20
44
75
92
72
98
f
V/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
D
D
J
J
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
G
= 15A
= 30A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= V
= 20V, V
= 16V, V
= 16V, V
= 16V, I
= 10V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 0V, V
= 10V
= 4.5V
= 0V
GS
Max
460
, I
30
D
Conditions
Conditions
e
e
Conditions
D
DS
S
F
D
D
= 250µA
D
GS
GS
GS
S
F
= 250µA
= 16A, V
= 30A, V
= 30A
= 15A
= 10V
= 12A
= 16A, V
= 30A, V
= 0V
= 0V
= 0V, T
e
e
www.irf.com
D
e
e
= 1mA
R
GS
J
R
GS
= 10V
= 125°C
= 10V
= 0V
= 0V
Units
mJ
A
e
e