IRFR3711PBF International Rectifier, IRFR3711PBF Datasheet - Page 4

• Manufacturer Part Number: IRFR3711PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3711PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2980pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
100
100000
0.1
10
10000
1
1000
0.2
100
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 150 C
J
1
Drain-to-Source Voltage
V
SD
°
0.8
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
Forward Voltage
T = 25 C
J
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
Coss
Crss
Ciss
°
1.4
10
f = 1 MHZ
2.0
V
GS
SHORTED
= 0 V
2.6
100
10000
1000
100
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 150°C
Single Pulse
30A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V
V
DS
DS
10
= 16V
= 10V
30
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100µsec
1msec
10msec
40
100
50