IRFR3711PBF International Rectifier, IRFR3711PBF Datasheet - Page 3

• Manufacturer Part Number: IRFR3711PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3711PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2980pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
0.1
2.0
TOP
BOTTOM
V
3.0
V
DS
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.0
1
2.7V
T = 25 C
J
5.0
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
6.0
10
= 25V
T = 150 C
J
°
7.0
°
100
8.0
1000
100
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I =
D
V
110A
DS
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
T , Junction Temperature ( C)
Vs. Temperature
, Drain-to-Source Voltage (V)
J
0
1
20 40 60 80 100 120 140 160
2.7V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
10V
3
100