IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
IRF6216TRPBF
Manufacturer Part Number
IRF6216TRPBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6216TRPBF.pdf
(8 pages)
Specifications of IRF6216TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
49nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6216TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
5.0
0.1
TOP
BOTTOM
-V
5.5
VGS
-15V
-12V
-10V
-8.0V
-7.0V
GS
, Gate-to-Source Voltage (V)
6.0
1
T = 25
J
6.5
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25
C
DS
J
= -50V
7.0
10
T = 150
J
°
C
7.5
°
C
8.0
100
Fig 2. Typical Output Characteristics
D
100
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60
TOP
BOTTOM
I
D
=
-40
-V
-2.2A
DS
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-20
T , Junction Temperature
, Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20
40
60
IRF6216
20µs PULSE WIDTH
T = 150
J
80
10
-5.0V
100
°
( C)
C
V
°
120
GS
=
140
-10V
3
160
100