IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 4
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IRF6216TRPBF
Manufacturer Part Number
IRF6216TRPBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6216TRPBF.pdf
(8 pages)
Specifications of IRF6216TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
49nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6216TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF6216
10000
4
1000
100
0.1
10
100
1
10
0.4
Fig 5. Typical Capacitance Vs.
T = 150
Fig 7. Typical Source-Drain Diode
J
1
Drain-to-Source Voltage
-V
SD
°
-V DS , Drain-to-Source Voltage (V)
C
,Source-to-Drain Voltage (V)
0.6
Forward Voltage
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
10
0.8
= C gs + C gd , C ds
T = 25
Crss
Coss
Ciss
J
f = 1 MHZ
°
C
100
1.0
V
GS
= 0 V
SHORTED
1.2
1000
100
0.1
10
1
12
10
8
6
4
2
0
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
Fig 8. Maximum Safe Operating Area
I
D
Fig 6. Typical Gate Charge Vs.
=
-V DS , Drain-toSource Voltage (V)
-1.3A
5
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
10
15
V
V
V
DS
DS
DS
= -120V
= -75V
= -30V
20
100
www.irf.com
25
1msec
10msec
100µsec
30
1000
35