IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6216TRPBF
• Description: MOSFET P-CH 150V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6216TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 1.3A, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.5
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
0.0001
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
Ambient Temperature

(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
°
0.01
125
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
1
V
V
GS
GS
t
d(on)
V

DS
1. Duty factor D =
2. Peak T
Notes:
µs
t
r
10
J
= P
D.U.T.
DM
R
D
x Z
t / t
1

t
thJA
IRF6216
d(off)
P
2
DM
+ T
100
+
-
t
f
A
t
V
1
DD
t
2
5
1000