IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 5
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IRF6216TRPBF
Manufacturer Part Number
IRF6216TRPBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6216TRPBF.pdf
(8 pages)
Specifications of IRF6216TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
49nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6216TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
2.5
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
0.0001
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
Ambient Temperature
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
°
0.01
125
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
1
V
V
GS
GS
t
d(on)
V
DS
1. Duty factor D =
2. Peak T
Notes:
µs
t
r
10
J
= P
D.U.T.
DM
R
D
x Z
t / t
1
t
thJA
IRF6216
d(off)
P
2
DM
+ T
100
+
-
t
f
A
t
V
1
DD
t
2
5
1000