STD2NK70Z-1 STMicroelectronics, STD2NK70Z-1 Datasheet - Page 3

MOSFET N-CH 700V 1.6A IPAK

STD2NK70Z-1

Manufacturer Part Number
STD2NK70Z-1
Description
MOSFET N-CH 700V 1.6A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD2NK70Z-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 800mA, 10V
Drain To Source Voltage (vdss)
700V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
11.4nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.6 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2NK70Z-1
Manufacturer:
ST
Quantity:
12 500
STD2NK70Z - STD2NK70Z-1
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
Table 2.
Table 3.
Symbol
Rthj-case
V
SD
Rthj-amb
Symbol
dv/dt
E
ESD(G-S)
I
V
I
AS
DM
V
V
AS
T
≤ 1.6A, di/dt ≤ 200A/µs, V
P
DGR
T
I
I
T
GS
stg
DS
D
D
tot
J
j
(1)
(2)
Avalanche characteristics
Absolute maximum ratings
Thermal data
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
DD
≤ V
(BR)DSS
Parameter
Parameter
, Tj ≤ T
C
GS
= 25°C
GS
= 20 kΩ)
JMAX
= 0)
C
C
= 25°C
= 100°C
55 to 150
Value
2000
± 30
0.36
700
700
1.6
6.4
4.5
2.78
45
100
300
1
Value
110
1.6
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
°C
W
°C
V
V
V
A
A
A
V
Unit
mJ
A
3/16

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