IRF7420PBF International Rectifier, IRF7420PBF Datasheet

IRF7420PBF

Manufacturer Part Number

IRF7420PBF

Description

MOSFET P-CH 12V 11.5A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF7420TRPBF.pdf (9 pages)

2.IRF7420PBF.pdf (4 pages)

Specifications of IRF7420PBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

14 mOhm @ 11.5A, 4.5V

Drain To Source Voltage (vdss)

12V

Current - Continuous Drain (id) @ 25° C

11.5A

Vgs(th) (max) @ Id

900mV @ 250µA

Gate Charge (qg) @ Vgs

38nC @ 4.5V

Input Capacitance (ciss) @ Vds

3529pF @ 10V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Channel Type

Current, Drain

-11.5 A

Gate Charge, Total

38 nC

Package Type

SO-8

Polarization

P-Channel

Power Dissipation

2.5 W

Resistance, Drain To Source On

14 Milliohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

291 ns

Time, Turn-on Delay

8.8 ns

Transconductance, Forward

32 S

Voltage, Breakdown, Drain To Source

-12 V

Voltage, Drain To Source

–12 V

Voltage, Forward, Diode

-1.2 V

Voltage, Gate To Source

±8 V

Transistor Polarity

P Channel

Continuous Drain Current Id

11.5A

Drain Source Voltage Vds

12V

On Resistance Rds(on)

14mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-900mV

Rohs Compliant

Yes

Configuration

Single Quad Drain Triple Source

Resistance Drain-source Rds (on)

14 mOhms

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

- 11.5 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

225 ns

Gate Charge Qg

38 nC

Minimum Operating Temperature

- 55 C

Rise Time

8.8 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7420PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (154Kb)

Thermal Resistance

These P-Channel HEXFET

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering technique

Description

www.irf.com

θJA

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

STG

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Power MOSFETs from

Parameter

@ -4.5V

-12V

DSS

Top View

17.5mΩ@V

HEXFET Power MOSFET

14mΩ@V

26mΩ@V

IRF7420PbF

-55 to +150

Max.

-11.5

DS(on)

-9.2

-12

-46

2.5

1.6

±8

max

= -4.5V

= -1.8V

= -2.5V

SO-8

11.5A

9.8A

8.1A

mW/°C

Units

°C/W

°C

8/25/06

Related parts for IRF7420PBF

IRF7420PBF Summary of contents

Page 1

... V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS -12V Top View @ -4. -4.5V GS ƒ ƒ ƒ IRF7420PbF HEXFET Power MOSFET R max I DS(on) D 14mΩ@V = -4.5V 11. 17.5mΩ@V = -2.5V 9. 26mΩ@V = -1.8V 8. SO-8 Max. Units ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150 C ° ...

Page 4

0V MHZ 5000 C iss = SHORTED 4500 C rss = oss = 4000 Ciss 3500 3000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

-11.5A 0.010 0.005 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 400 350 300 250 -250µA 200 150 ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dÃ IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...

Related keywords

irf740
irf742
irf7413
irf7468
irf7425
irf7424
irf7422d2
irf7420
irf7416
irf7410
irf7494
irf7404
irf7420tr
irf7425trpbf
irf7424pbf
irf7420pbf
IRF7420PBF datasheet
IRF7420PBF data sheet
IRF7420PBF pdf datasheet
IRF7420PBF component
IRF7420PBF part
IRF7420PBF distributor
IRF7420PBF RoHS
IRF7420PBF datasheet download