IRF7420PBF International Rectifier, IRF7420PBF Datasheet - Page 2
![MOSFET P-CH 12V 11.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7420PBF
Manufacturer Part Number
IRF7420PBF
Description
MOSFET P-CH 12V 11.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7420PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3529pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-11.5 A
Gate Charge, Total
38 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
291 ns
Time, Turn-on Delay
8.8 ns
Transconductance, Forward
32 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P Channel
Continuous Drain Current Id
11.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-900mV
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
225 ns
Gate Charge Qg
38 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.8 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7420PBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
SM
S
rr
R
I
I
d(on)
d(off)
r
f
DSS
GSS
SD
2
fs
rr
(BR)DSS
GS(th)
iss
oss
rss
DS(on)
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-0.4
––– 0.007 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 3529 –––
––– 1013 –––
–––
-12
Surface mounted on 1 in square Cu board, t ≤ 10sec.
32
–––
–––
–––
––– 17.5
–––
–––
–––
–––
–––
––– -100
–––
291
225
656
62
61
8.1
8.7
8.8
8.8
38
-1.2
-0.9
-1.0
–––
–––
100
–––
–––
–––
437
338
–––
-25
93
92
14
26
13
13
2.5
46
V/°C Reference to 25°C, I
µC
mΩ
ns
µA
nC
ns
pF
V
nA
V
V
S
di/dt = -100A/µs
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= 25°C, I
= -11.5A
= -1.0A
= 25°C, I
= 6Ω
= 6Ω
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -6V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -8V
= 8V
= -4.5V
= -6V, V
= 0V
GS
Conditions
, I
D
S
F
Conditions
D
GS
= -2.5A
= -250µA
D
= -2.5A, V
D
D
D
= -250µA
GS
GS
= -11.5A
= -11.5A
= -9.8A
= -8.1A
= -4.5V
= 0V
= 0V, T
www.irf.com
D
= -1mA
GS
J
G
= 0V
= 70°C
D
S