IRF7420PBF International Rectifier, IRF7420PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7420PBF
• Description: MOSFET P-CH 12V 11.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7420PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3529pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -11.5 A
• Gate Charge, Total: 38 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 14 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 291 ns
• Time, Turn-on Delay: 8.8 ns
• Transconductance, Forward: 32 S
• Voltage, Breakdown, Drain To Source: -12 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 11.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -900mV
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 11.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 225 ns
• Gate Charge Qg: 38 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.025
0.020
0.015
0.010
0.005
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
0.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
4.0
I D = -11.5A
6.0
8.0
0.08
0.06
0.04
0.02
0
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0.0
12V
V
GS
V GS = -1.8V
Same Type as D.U.T.
Current Regulator
10.0
.2µF
-ID , Drain Current ( A )
Drain Current
50KΩ
-3mA
Current Sampling Resistors
20.0
.3µF
I
G
V GS = -2.5V
30.0
V GS = -4.5V
D.U.T.
I
D
www.irf.com
40.0
+
-
V
DS
50.0