STD2NK90ZT4 STMicroelectronics, STD2NK90ZT4 Datasheet - Page 5
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STD2NK90ZT4
Manufacturer Part Number
STD2NK90ZT4
Description
MOSFET N-CH 900V 2.1A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK90Z.pdf
(18 pages)
Specifications of STD2NK90ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.05A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.3 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.1 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4332-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2NK90ZT4
Manufacturer:
ST
Quantity:
20 000
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 7.
C
V
Symbol
Symbol
Symbol
CASE
V
R
oss eq
(BR)DSS
g
t
t
C
I
inceases from 0 to 80% V
I
C
C
GS(th)
Q
Q
d(on)
d(off)
DS(on
DSS
GSS
fs
Q
oss
oss eq.
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
Voltage
Zero gate voltage
Drain current (V
Gate-body Leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
DSS
GS
= 0)
I
V
V
V
V
V
D
V
V
V
V
V
V
(see Figure 22)
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
GS
= 1 mA, V
V
R
(see Figure 19)
= Max Rating
= Max Rating, T
= ± 20 V
= V
= 10 V, I
= 15 V , I
= 25 V, f = 1 MHz,
= 0
= 0 V, V
= 10 V
= 720 V, I
DD
G
Test condictions
Test condictions
Test condictions
= 4.7 Ω, V
GS
= 450 V, I
, I
GS
D
D
DS
= 50 µA
D
= 1.05 A
D
= 0
= 1.05 A
= 0 to 720 V
= 2 A,
D
GS
= 1 A,
C
= 10 V
= 125°C
Electrical characteristics
Min.
Min. Typ. Max.
Min.
900
3
Typ.
19.5
10.8
21
11
43
40
Typ.
3.75
485
2.3
3.4
50
10
24
5
oss
when V
Max.
Max. Unit
± 10
27
4.5
6.5
50
1
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
µA
ns
ns
ns
ns
S
5/18
V
V
Ω